• DocumentCode
    766680
  • Title

    Highly scalable ballistic injection AND-type (BiAND) flash memory

  • Author

    Wu, Meng-Yi ; Dai, Sheng-Huei ; Hu, Shu-Fen ; Yang, Evans Ching-Sung ; Hsu, Charles Ching-Hsiang ; King, Ya-Chin

  • Author_Institution
    Nat. Tsing-Hua Univ., Hsinchu, Taiwan
  • Volume
    53
  • Issue
    1
  • fYear
    2006
  • Firstpage
    109
  • Lastpage
    111
  • Abstract
    An AND-type split-gate Flash memory cell with a trench select gate and a buried n+ source is proposed. This cell, programmed by ballistic source side injection (BSSI), can provide high programming efficiency with a cell size of 5F2. Furthermore, both the programming speed and the read current are enhanced by the shared select gate configuration.
  • Keywords
    flash memories; logic gates; AND-type array; ballistic source side injection; flash memory; read current; Acceleration; Channel hot electron injection; Energy consumption; Flash memory; Hot carriers; Laboratories; Low voltage; Nonvolatile memory; Scalability; Split gate flash memory cells; AND-type array; Flash memory; ballistic; split-gate Flash;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2005.860636
  • Filename
    1561554
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=766680