DocumentCode
766690
Title
Parameterized SPICE model for a phase-change RAM device
Author
Cobley, Rosie A. ; Wright, C.David
Author_Institution
Univ. of Exeter, UK
Volume
53
Issue
1
fYear
2006
Firstpage
112
Lastpage
118
Abstract
A simple form of a SPICE macro model for a generic phase-change random access memory device is presented. The approach is based upon lumped parameter multiple level models. The SPICE implementation is described using a series of increasingly complex modeling blocks for dc to transient analysis. The effect of nonlinear phase switching during the programming cycle is demonstrated in a SPICE simulation and compared to experimental data.
Keywords
SPICE; amorphous semiconductors; integrated circuit modelling; phase change materials; random-access storage; SPICE model; amorphous semiconductor; circuit modeling; lumped parameter multiple level model; nonlinear phase switching; phase-change random access memory device; Circuits; Crystallization; Electrodes; Material storage; Optical materials; Phase change memory; Phase change random access memory; SPICE; Tellurium; Testing; Amorphous semiconductors; SPICE; circuit modeling; memories; phase-change random access memory (PC-RAM);
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2005.860642
Filename
1561555
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