DocumentCode
766728
Title
Comparison of quantum Hall effect resistance standards of the BNM/LCIE and the BIPM
Author
Delahaye, F. ; Witt, T.J. ; Piquemal, F. ; Geneves, Gerard
Author_Institution
Bur. Int. des Poids et Mesures, Sevres, France
Volume
44
Issue
2
fYear
1995
fDate
4/1/1995 12:00:00 AM
Firstpage
258
Lastpage
261
Abstract
A comparison of quantum Hall effect (QHE) resistance standards has been carried out by taking a complete QHE system from the BIPM to the Laboratoire Primaire d´Electricite-Magnetisme (BNM/LCIE). From December, 14-17, 1993, measurements of the same 100 Ω standard resistor were carried out in terms of the quantized Hall resistance (QHR) standards of the two laboratories. This exercise followed a preliminary comparison in July 1993 in which the ratio of the 100 Ω standard to a 1 Ω standard, and that of the 100 R standard to a 10 kΩ standard were measured at the BNM/LCIE using the resistance-ratio bridges of both laboratories. All comparison results agree to within 4 parts in 109 . In particular, the values attributed by the two laboratories to the 100 R standard, based on the mean of measurements made on the i=2 plateaus of GaAs-based heterostructures, agreed to (1.2±3.0) parts in 109
Keywords
bridge circuits; cryogenic electronics; electric resistance measurement; laboratories; measurement standards; quantum Hall effect; resistors; 1 ohm; 10 kohm; 100 ohm; BIPM; BNM/LCIE; GaAs; GaAs heterostructures; cryogenic current comparator; quantum Hall effect; resistance standards; resistance-ratio bridges; standard resistor; Bridge circuits; Bridges; Cryogenics; Electrical resistance measurement; Hall effect; Laboratories; Measurement standards; Particle measurements; Performance evaluation; Resistors;
fLanguage
English
Journal_Title
Instrumentation and Measurement, IEEE Transactions on
Publisher
ieee
ISSN
0018-9456
Type
jour
DOI
10.1109/19.377825
Filename
377825
Link To Document