Title : 
Loop-based inductance extraction and modeling for multiconductor on-chip interconnects
         
        
            Author : 
Yu, Sunil ; Petranovic, Dusan M. ; Krishnan, Shoba ; Lee, Kwyro ; Yang, Cary Y.
         
        
            Author_Institution : 
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
         
        
        
        
        
        
        
            Abstract : 
An efficient extraction and modeling methodology for self and mutual inductances within multiconductors for on-chip interconnects is investigated. The method is based on physical layout considerations and current distribution on multiple return paths, leading to loop inductance and resistance. It provides a lumped circuit model suitable for timing analysis in any circuit simulator, which can represent frequency-dependent characteristics. This novel modeling methodology accurately provides the mutual inductance and resistance as well as self terms within a wide frequency range without using any fitting algorithm. Measurement results for single and coupled wires within a multiconductor system, fabricated using 0.13 and 0.18 μm CMOS technologies, confirm the validity of the proposed method. Our methodology can be applicable to high-speed global interconnects for post-layout as well as prelayout extraction and modeling.
         
        
            Keywords : 
CMOS integrated circuits; electric resistance; electromagnetic coupling; integrated circuit interconnections; integrated circuit modelling; lumped parameter networks; 0.13 micron; 0.18 micron; CMOS technology; electromagnetic coupling; high-speed global interconnect; loop-based inductance extraction; lumped circuit model; multiconductor on-chip interconnects; Analytical models; CMOS technology; Circuit analysis; Circuit simulation; Current distribution; Frequency; Inductance; Integrated circuit interconnections; Semiconductor device modeling; Timing; Electromagnetic coupling; inductance; integrated circuit interconnections; modeling;
         
        
        
            Journal_Title : 
Electron Devices, IEEE Transactions on
         
        
        
        
        
            DOI : 
10.1109/TED.2005.860655