Title :
LLG Simulation of MRAM Switching Trajectories
Author :
Visscher, P.B. ; Wang, Shuxia
Author_Institution :
Dept. of Phys. & Astron., Alabama Univ.
Abstract :
The simplest method for estimating switching rates, transition state theory (TST), badly overestimates the switching rate for common materials with low Landau-Lifshitz damping. By classifying and counting simulated switching trajectories, we show why this occurs: there are orbits that swing back and forth between the stable potential wells (and are counted as multiple switches by the TST) which are not real switches. We suggest methods for correcting the TST rate for this phenomenon, to correctly estimate the switching rate for MRAM and spin-torque systems
Keywords :
magnetic storage; magnetic switching; random-access storage; Landau-Lifshitz damping; MRAM switching trajectories; spin-torque systems; transition state theory; Astronomy; Computational modeling; Damping; Magnetization reversal; Orbits; Physics; Potential well; Random access memory; State estimation; Switches; Magnetic random access memory (MRAM); magnetization reversal;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2006.880152
