Title :
A W-band InAs/AlSb low-noise/low-power amplifier
Author :
Deal, W.R. ; Tsai, R. ; Lange, M.D. ; Boos, J.B. ; Bennett, B.R. ; Gutierrez, A.
fDate :
4/1/2005 12:00:00 AM
Abstract :
The first W-band antimonide based compound semiconductor low-noise amplifier has been demonstrated. The compact 1.4-mm2 three-stage co-planar waveguide amplifier with 0.1-μm InAs/AlSb high electron mobility transistor devices is fabricated on a 100-μm GaAs substrate. Minimum noise-figure of 5.4dB with an associated gain of 11.1 dB is demonstrated at a total chip dissipation of 1.8 mW at 94 GHz. Biased for higher gain, 16/spl plusmn/1 dB is measured over a 77-103 GHz frequency band.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; coplanar waveguide components; field effect MIMIC; gallium arsenide; indium compounds; low-power electronics; millimetre wave amplifiers; 1.8 mW; 11.1 dB; 5.4 dB; 77 to 103 GHz; 94 GHz; GaAs; InAs-AlSb; MMIC amplifier; antimonide-based compound semiconductor; coplanar waveguide amplifier; grounded coplanar waveguide; high electron mobility transistor devices; low-noise amplifier; low-power amplifier; millimeter-wave imaging; Frequency measurement; Gain measurement; Gallium arsenide; HEMTs; Low-noise amplifiers; MODFETs; Semiconductor device measurement; Semiconductor device noise; Semiconductor waveguides; Substrates; Antimonide-based compound semiconductor (ABCS); grounded coplanar waveguide (GCPW); low noise amplifier (LNA); millimeter-wave imaging;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2005.845691
