A 2.5-GHz InGaP/GaAs differential cross-coupled self-oscillating mixer (SOM) IC

Author

Tofighi, Mohammad-Reza ; Daryoush, Afshin S.

Volume

15

Issue

4

fYear

2005

fDate

4/1/2005 12:00:00 AM

Firstpage

211

Lastpage

213

Abstract

This letter presents a monolithic differential cross-coupled self-oscillating mixer (SOM). The SOM chip is fabricated using an InGaP/GaAs heterojunction bipolar transistor (HBT) foundry process and operates at 2.5 GHz. The chip provides voltage controlled oscillator (VCO) operation, up- and down-conversion mixing, and injection locking functionalities. The voltage down-conversion gain and the power up-conversion gain of up to 15 and 11.5 dB, respectively, are measured for the circuit. There is a compromise between obtaining a high conversion gain, and the oscillator power (-0.3 dBm for a 5-V supply) and phase noise (-84 dBc/Hz at 100 kHz). However, phase noise improvement of 32dB is observed by injection of a -30-dBm stable reference.

Keywords

III-V semiconductors; MMIC mixers; UHF mixers; bipolar MMIC; frequency convertors; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit noise; phase noise; voltage-controlled oscillators; 11.5 dB; 15 dB; 2.5 GHz; InGaP-GaAs; MMIC; SOM IC; VCO; conversion gain; differential cross-coupled self-oscillating mixer integrated circuit; down-conversion mixing; frequency conversion; heterojunction bipolar transistor; injection locking; microwave monolithic integrated circuit chip; phase noise; up-conversion mixing; voltage controlled oscillator; Foundries; Gallium arsenide; Heterojunction bipolar transistors; Injection-locked oscillators; Mixers; Monolithic integrated circuits; Phase noise; Power measurement; Voltage; Voltage-controlled oscillators; Conversion gain; GaAs heterojunction bipolar transistor (HBT); frequency conversion; microwave monolithic integrated circuit (MMIC) chip; phase noise; self-oscillating mixer (SOM); tuning range; voltage controlled oscillator (VCO);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2005.845693

Filename

1416931