DocumentCode :
766932
Title :
Verification of on-wafer noise parameter measurements
Author :
Boudiaf, Ali ; Dubon-Chevallier, Chantal ; Pasquet, Daniel
Author_Institution :
EMO-ENSEA, Cergy Pontoise Cedey, France
Volume :
44
Issue :
2
fYear :
1995
fDate :
4/1/1995 12:00:00 AM
Firstpage :
332
Lastpage :
335
Abstract :
Using a thin film technology, we have designed and fabricated a new passive device for noise parameter measurement test instrumentation verification. The main feature specifying this device is the same order of magnitude for input-output reflection coefficients and for noise parameters, as for low-noise field effect transistors. This new device is useful as a verification artifact, suited for on-wafer measurements due to its small size and wide operation bandwidth
Keywords :
electric noise measurement; microwave measurement; excess noise ratio; input-output reflection coefficients; low-noise field effect transistors; noise figure; noise parameter measurement; on-wafer noise parameter measurements; passive device; test instrumentation verification; thin film technology; Acoustic reflection; Bandwidth; Circuit noise; Electrical resistance measurement; FETs; Measurement standards; Noise figure; Noise measurement; Scattering parameters; Testing;
fLanguage :
English
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9456
Type :
jour
DOI :
10.1109/19.377845
Filename :
377845
Link To Document :
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