DocumentCode
766932
Title
Verification of on-wafer noise parameter measurements
Author
Boudiaf, Ali ; Dubon-Chevallier, Chantal ; Pasquet, Daniel
Author_Institution
EMO-ENSEA, Cergy Pontoise Cedey, France
Volume
44
Issue
2
fYear
1995
fDate
4/1/1995 12:00:00 AM
Firstpage
332
Lastpage
335
Abstract
Using a thin film technology, we have designed and fabricated a new passive device for noise parameter measurement test instrumentation verification. The main feature specifying this device is the same order of magnitude for input-output reflection coefficients and for noise parameters, as for low-noise field effect transistors. This new device is useful as a verification artifact, suited for on-wafer measurements due to its small size and wide operation bandwidth
Keywords
electric noise measurement; microwave measurement; excess noise ratio; input-output reflection coefficients; low-noise field effect transistors; noise figure; noise parameter measurement; on-wafer noise parameter measurements; passive device; test instrumentation verification; thin film technology; Acoustic reflection; Bandwidth; Circuit noise; Electrical resistance measurement; FETs; Measurement standards; Noise figure; Noise measurement; Scattering parameters; Testing;
fLanguage
English
Journal_Title
Instrumentation and Measurement, IEEE Transactions on
Publisher
ieee
ISSN
0018-9456
Type
jour
DOI
10.1109/19.377845
Filename
377845
Link To Document