Film Growth and Magnetization Reversal Mechanism of Co-Cr Films

A new method of evaluating the magnetization reversal mechanism is used for both single- and double-layer Co-Cr films. The mechanism for thick films is by rotation and for thin films it is by domain wall motion. The mechanism for any given film is evaluated by angular dependence of the hysteresis loss and coercive force for the films of thickness above 380 Ã…, the magnetization reversal mechanism takes place by rotation. At 250 Ã…, the film shows the tendencies of the magnetization reversal by domain wall motion. The investigation has suggested the pseudo double-layer structure with respect to the magnetization mechanism in single-layer films.