A 5-6 GHz SiGe HBT monolithic active isolator for improving reverse isolation in wireless systems

Author

Lee, Jongsoo ; Cressler, John D. ; Joseph, Alvin J.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

15

Issue

4

fYear

2005

fDate

4/1/2005 12:00:00 AM

Firstpage

220

Lastpage

222

Abstract

A monolithic active isolator combining common-base and common-collector configurations of SiGe heterojunction bipolar transistors (HBT) is used to improve reverse isolation in wireless system applications. This simple active isolator results in an insertion loss of 2 dB and input IP3 of +0.7 dBm over 5-6 GHz with a 1.8-mA current flow for the core circuit of a 3-V supply.

Keywords

Ge-Si alloys; bipolar integrated circuits; heterojunction bipolar transistors; microwave isolators; 1.8 mA; 2 dB; 3 V; 5 to 6 GHz; HBT monolithic active isolator; SiGe; common-base configurations; common-collector configurations; heterojunction bipolar transistors; insertion loss; reverse isolation; wireless systems; Circuits; Ferrites; Germanium silicon alloys; Heterojunction bipolar transistors; Insertion loss; Isolation technology; Isolators; Loss measurement; Magnetic materials; Silicon germanium; Monolithic active isolator; SiGe heterojunction bipolar transistor (HBT); reverse isolation;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2005.845696

Filename

1416934