Title :
A 5-6 GHz SiGe HBT monolithic active isolator for improving reverse isolation in wireless systems
Author :
Lee, Jongsoo ; Cressler, John D. ; Joseph, Alvin J.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
4/1/2005 12:00:00 AM
Abstract :
A monolithic active isolator combining common-base and common-collector configurations of SiGe heterojunction bipolar transistors (HBT) is used to improve reverse isolation in wireless system applications. This simple active isolator results in an insertion loss of 2 dB and input IP3 of +0.7 dBm over 5-6 GHz with a 1.8-mA current flow for the core circuit of a 3-V supply.
Keywords :
Ge-Si alloys; bipolar integrated circuits; heterojunction bipolar transistors; microwave isolators; 1.8 mA; 2 dB; 3 V; 5 to 6 GHz; HBT monolithic active isolator; SiGe; common-base configurations; common-collector configurations; heterojunction bipolar transistors; insertion loss; reverse isolation; wireless systems; Circuits; Ferrites; Germanium silicon alloys; Heterojunction bipolar transistors; Insertion loss; Isolation technology; Isolators; Loss measurement; Magnetic materials; Silicon germanium; Monolithic active isolator; SiGe heterojunction bipolar transistor (HBT); reverse isolation;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2005.845696
