Effects of gate structures on the RF performance in PD SOI MOSFETs

The radio-frequency (RF) performance of PD silicon-on-insulator metal oxide semiconductor field effect transistors with T-gate and H-gate structures has been investigated. Our measurement shows that H-gate devices have larger cutoff frequency and smaller minimum noise figure than T-gate devices. This improved RF performance in H-gate devices can be explained mainly by the enhancement of transconductance resulting from the gate extension induced inversion charges and the low gate resistance. We conclude that the H-gate structure is superior to the T-gate structure for the design of the low-noise amplifier (LNA).