DocumentCode :
766984
Title :
A 0.35-μm CMOS 2-GHz VCO in wafer-level package
Author :
Sang-Woong Yoon ; Pinel, S. ; Laskar, J.
Author_Institution :
Georgia Electron. Design Center, Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
15
Issue :
4
fYear :
2005
fDate :
4/1/2005 12:00:00 AM
Firstpage :
229
Lastpage :
231
Abstract :
This letter presents a complementary metal oxide semiconductor (CMOS) voltage-controlled oscillator (VCO) with a high-Q inductor in a wafer-level package for the LC-resonator. The on-chip inductor is implemented using the redistribution metal layer of the wafer-level package (WLP), and therefore it is called a WLP inductor. Using the thick passivation and copper metallization, the WLP inductor has high quality-factor (Q-factor). A 2-nH inductor exhibits a Q-factor of 8 at 2 GHz. The center frequency of the VCO is 2.16 GHz with a tuning range of 385 MHz (18%). The minimum phase noise is measured to be -120.2 dBc/Hz at an offset frequency of 600 kHz. The dc power consumed by the VCO-core is 1.87 mW with a supply voltage of 1.7 V and a current of 1.1 mA. The output power with a 50-/spl Omega/ load is -12.5/spl plusmn/1.3 dBm throughout the whole tuning range. From the best of our knowledge, compared with recently published 2-GHz-band 0.35 μm CMOS VCOs in the literature, the VCO in this work shows the lowest power consumption and the best figure-of-merit.
Keywords :
CMOS integrated circuits; Q-factor; UHF oscillators; inductors; integrated circuit metallisation; integrated circuit packaging; passivation; phase noise; voltage-controlled oscillators; 0.35 micron; 1.1 mA; 1.7 V; 1.87 mW; 2 GHz; 2.16 GHz; 600 kHz; CMOS voltage controlled oscillator; LC resonator; Q-factor; VCO; WLP inductor; copper metallization; high-Q inductor; minimum phase noise; on-chip inductor; phase noise; quality-factor; redistribution metal layer; thick passivation; wafer level package; wafer level packaging; Copper; Frequency; Inductors; Metallization; Passivation; Q factor; Semiconductor device packaging; Tuning; Voltage-controlled oscillators; Wafer scale integration; Complementary metal oxide semiconductor (CMOS); inductor; quality-factor (Q-factor); voltage-controlled oscillator (VCO); wafer-level package (WLP);
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2005.845699
Filename :
1416937
Link To Document :
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