Title :
Nearly White-Light Emission From GaN-Based Light-Emitting Diodes Integrated With a Porous SiO 2 Layer
Author :
Hsieh, Chih-Hao ; Ke, Min-Yung ; Shih, Ghien-An ; Chiu, Tzu-Yang ; Huang, Jian Jang
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
fDate :
5/1/2007 12:00:00 AM
Abstract :
In this letter, we develop a nearly white-light-emitting device by integrating blue/green emission from a GaN-based light-emitting diode with red emission from a porous SiO2 layer. The porous SiO 2 layer was fabricated by a novel process procedure to create Si nanocrystals on top of the n-type GaN layer. Red light is generated from the metal-oxide-semiconductor (Ni-Au-SiO2 oxide-n-type GaN) structure due to the electron-hole recombination in the Si nanocrystals. The device shows a blue light emission at a low biased voltage and nearly white-light emission (green and red colors) at a bias voltage between 14 and 16 V. Our results show the potential of applying such an integrated structure to white-light illumination
Keywords :
III-V semiconductors; MIS devices; electron-hole recombination; elemental semiconductors; gallium compounds; integrated optics; integrated optoelectronics; light emitting diodes; nanostructured materials; porous materials; silicon; silicon compounds; GaN-based light-emitting diodes; Ni-Au-SiO2-GaN; Si nanocrystals; blue-green emission; electron-hole recombination; integrated structure; n-type GaN layer; nearly white-light emission; nearly white-light emitting device; porous SiO2 layer; red emission; white-light illumination; Gallium nitride; Light emitting diodes; Lighting; Nanocrystals; Phosphors; Plasma temperature; Radiative recombination; Semiconductor diodes; Spontaneous emission; Voltage; Light-emitting diodes (LEDs); Si-nanocrystal; SiO$_{2}$ porous layer; white light;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.893760
