Title :
Characterizing Bandgap Gratings in GaAs : AlAs Superlattice Structures Using Interface Phonons
Author :
Scrutton, Philip ; Sorel, Marc ; Hutchings, David C. ; Aitchison, J.Stewart ; Helmy, A.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Toronto, Ont.
fDate :
5/1/2007 12:00:00 AM
Abstract :
Interface Raman modes were used to study quantum-well intermixing in GaAs : AlAs superlattice (SL) structures using room-temperature spatially resolved Raman spectroscopy. The intermixing was observed to degrade the interface mode intensity, which can be used as a sensitive indicator of the SL quality. This feature, along with spatially resolved photoluminescence, was used to investigate bandgap modulation in periodically intermixed bandgap gratings, fabricated using implantation induced disordering. Using interface modes instead of bulk-like modes is a promising avenue for characterizing SL structures that rely on intricate bandgap features
Keywords :
III-V semiconductors; Raman spectra; aluminium compounds; diffraction gratings; energy gap; gallium arsenide; optical modulation; photoluminescence; semiconductor quantum wells; semiconductor superlattices; surface phonons; 293 to 298 K; GaAs:AlAs; GaAs:AlAs superlattice structures; Raman spectroscopy; bandgap gratings; bandgap modulation; bulk-like modes; implantation induced disordering; interface Raman modes; interface mode intensity; interface modes; interface phonons; periodic intermixing; photoluminescence; photonic integrated circuits; quantum-well intermixing; room-temperature spectroscopy; spatial resolution; Degradation; Gallium arsenide; Gratings; Phonons; Photonic band gap; Quantum wells; Raman scattering; Spatial resolution; Spectroscopy; Superlattices; Gratings; Raman spectroscopy; intermixing semiconductor superlattices (SLs); phase matching;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.894985
