DocumentCode
767293
Title
Junction Thermal Impedance Measurement of Superluminescent Diodes
Author
Zhou, Sheng ; Zhang, Xiupu
Author_Institution
Dept. of Electr. & Comput. Eng., Concordia Univ., Montreal, Que.
Volume
19
Issue
9
fYear
2007
fDate
5/1/2007 12:00:00 AM
Firstpage
683
Lastpage
685
Abstract
A new method is presented for junction thermal impedance measurement of superluminescent diodes. A few derivatives of mean wavelength, optical power, and voltage over temperature and current are used for the calculation. Carrier effect is removed. High accuracy is obtained by data regression on variables separately. Both analytical formula and experimental results are provided
Keywords
superluminescent diodes; data regression; junction thermal impedance measurement; mean wavelength derivatives; superluminescent diodes; thermal impedance; Impedance measurement; Power generation; Pulse measurements; Semiconductor device measurement; Semiconductor device packaging; Stimulated emission; Superluminescent diodes; Temperature; Voltage; Wavelength measurement; Mean wavelength; measurement; superluminescent diodes (SLDs); thermal impedance;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2007.895051
Filename
4147633
Link To Document