DocumentCode :
767293
Title :
Junction Thermal Impedance Measurement of Superluminescent Diodes
Author :
Zhou, Sheng ; Zhang, Xiupu
Author_Institution :
Dept. of Electr. & Comput. Eng., Concordia Univ., Montreal, Que.
Volume :
19
Issue :
9
fYear :
2007
fDate :
5/1/2007 12:00:00 AM
Firstpage :
683
Lastpage :
685
Abstract :
A new method is presented for junction thermal impedance measurement of superluminescent diodes. A few derivatives of mean wavelength, optical power, and voltage over temperature and current are used for the calculation. Carrier effect is removed. High accuracy is obtained by data regression on variables separately. Both analytical formula and experimental results are provided
Keywords :
superluminescent diodes; data regression; junction thermal impedance measurement; mean wavelength derivatives; superluminescent diodes; thermal impedance; Impedance measurement; Power generation; Pulse measurements; Semiconductor device measurement; Semiconductor device packaging; Stimulated emission; Superluminescent diodes; Temperature; Voltage; Wavelength measurement; Mean wavelength; measurement; superluminescent diodes (SLDs); thermal impedance;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2007.895051
Filename :
4147633
Link To Document :
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