Author :
Ledentsov, Nikolay N. ; Kovsh, A.R. ; Zhukov, A.E. ; Maleev, N.A. ; Mikhrin, S.S. ; Vasil´ev, A.P. ; Semenova, E.S. ; Maximov, M.V. ; Shernyakov, Yu.M. ; Kryzhanovskaya, N.V. ; Ustinov, V.M. ; Bimberg, Dieter
Abstract :
Stacked InAs/InGaAs quantum dots are used as an active media of metamorphic InGaAs-InGaAlAs lasers grown on GaAs substrates by molecular beam epitaxy. High quantum efficiency (ηi>60%) and low internal losses (α<3-4 cm-1) are realised. The transparency current density per single QD layer is estimated as ∼70 A/cm2 and the characteristic temperature is 60 K (20-85°C). The emission wavelength exceeds 1.51 μm at temperatures above 60°C.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum dot lasers; semiconductor quantum dots; 1.51 micron; 20 to 85 C; GaAs; GaAs substrates; InAs-InGaAs; InGaAs-InGaAlAs; active media; characteristic temperature; emission wavelength; high performance quantum dot lasers; high quantum efficiency; low internal losses; metamorphic InGaAs-InGaAlAs lasers; molecular beam epitaxy; stacked InAs/InGaAs quantum dots; threshold current density; transparency current density;
