Title :
High-performance 1.3 μm InGaAs vertical cavity surface emitting lasers
Author :
Sundgren, P. ; Von Würtemberg, R. Marcks ; Berggren, J. ; Hammar, M. ; Ghisoni, M. ; Oscarsson, V. ; Ödling, E. ; Malmquist, J.
Author_Institution :
Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden
fDate :
7/24/2003 12:00:00 AM
Abstract :
A report is presented on high-performance InGaAs/GaAs double quantum well vertical cavity surface emitting lasers (VCSELs) with record long emission wavelengths up to 1300 nm. Due to a large gain-cavity detuning these VCSELs show excellent temperature performance with very stable threshold current and output power characteristics. For 1.27 μm singlemode devices the threshold current is found to decrease from 2 to 1 mA between 10 and 90°C, while the peak output power only drops from 1 to 0.6 mW. Large-area 1300 nm VCSELs show multimode output power close to 3 mW.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser modes; laser stability; laser transitions; quantum well lasers; surface emitting lasers; 0.6 to 3 mW; 1 to 2 mA; 1.27 to 1.3 micron; 10 to 90 C; InGaAs VCSELs; InGaAs-GaAs; double quantum well lasers; gain-cavity detuning; high-performance VCSELs; large-area VCSELs; multimode output power; semiconductor laser; single-mode devices; stable output power characteristics; stable threshold current; surface emitting lasers; temperature performance; vertical cavity SEL;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030733
