• DocumentCode
    767571
  • Title

    Sinusoidal gate voltages for a three-gate single electron pump

  • Author

    Fukushima, Akio ; Iwasa, Akio ; Yoshihiro, Kazuo ; Kinoshita, Joji ; Endo, Tadashi

  • Author_Institution
    Electrotech. Lab., Ibaraki, Japan
  • Volume
    44
  • Issue
    2
  • fYear
    1995
  • fDate
    4/1/1995 12:00:00 AM
  • Firstpage
    561
  • Lastpage
    563
  • Abstract
    The characteristics of a three-gate single electron pump with four small tunnel junctions have been studied by simple calculations. Comparing the charging energy of a three-gate pump for different configurations of excess electrons, we obtained the equilibrium energy planes in a three dimensional (3D) gate-voltage space. The polygon formed by the union of the equilibrium energy planes for all configurations nearest to a given configuration is depicted in the 3D space. Inside the polygon, the configuration of excess electrons is stable. The pump can be operated by applying a set of sinusoidally varying gate voltages, whose trajector in the 3D space is presented
  • Keywords
    beam handling equipment; electric current measurement; measurement standards; tunnelling; voltage measurement; 3D space; characteristics; charging energy; equilibrium energy planes; polygon; quantum current standard; quantum voltage standard; sinusoidal gate voltage; sinusoidally varying gate voltage; three dimensional gate-voltage space; three-gate single electron pump; tunnel junctions; Capacitance; Delay; Electrons; Frequency; Metrology; Space charge; Space vector pulse width modulation; Tunneling; Uncertainty; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Instrumentation and Measurement, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9456
  • Type

    jour

  • DOI
    10.1109/19.377907
  • Filename
    377907