DocumentCode
767571
Title
Sinusoidal gate voltages for a three-gate single electron pump
Author
Fukushima, Akio ; Iwasa, Akio ; Yoshihiro, Kazuo ; Kinoshita, Joji ; Endo, Tadashi
Author_Institution
Electrotech. Lab., Ibaraki, Japan
Volume
44
Issue
2
fYear
1995
fDate
4/1/1995 12:00:00 AM
Firstpage
561
Lastpage
563
Abstract
The characteristics of a three-gate single electron pump with four small tunnel junctions have been studied by simple calculations. Comparing the charging energy of a three-gate pump for different configurations of excess electrons, we obtained the equilibrium energy planes in a three dimensional (3D) gate-voltage space. The polygon formed by the union of the equilibrium energy planes for all configurations nearest to a given configuration is depicted in the 3D space. Inside the polygon, the configuration of excess electrons is stable. The pump can be operated by applying a set of sinusoidally varying gate voltages, whose trajector in the 3D space is presented
Keywords
beam handling equipment; electric current measurement; measurement standards; tunnelling; voltage measurement; 3D space; characteristics; charging energy; equilibrium energy planes; polygon; quantum current standard; quantum voltage standard; sinusoidal gate voltage; sinusoidally varying gate voltage; three dimensional gate-voltage space; three-gate single electron pump; tunnel junctions; Capacitance; Delay; Electrons; Frequency; Metrology; Space charge; Space vector pulse width modulation; Tunneling; Uncertainty; Voltage control;
fLanguage
English
Journal_Title
Instrumentation and Measurement, IEEE Transactions on
Publisher
ieee
ISSN
0018-9456
Type
jour
DOI
10.1109/19.377907
Filename
377907
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