DocumentCode :
767571
Title :
Sinusoidal gate voltages for a three-gate single electron pump
Author :
Fukushima, Akio ; Iwasa, Akio ; Yoshihiro, Kazuo ; Kinoshita, Joji ; Endo, Tadashi
Author_Institution :
Electrotech. Lab., Ibaraki, Japan
Volume :
44
Issue :
2
fYear :
1995
fDate :
4/1/1995 12:00:00 AM
Firstpage :
561
Lastpage :
563
Abstract :
The characteristics of a three-gate single electron pump with four small tunnel junctions have been studied by simple calculations. Comparing the charging energy of a three-gate pump for different configurations of excess electrons, we obtained the equilibrium energy planes in a three dimensional (3D) gate-voltage space. The polygon formed by the union of the equilibrium energy planes for all configurations nearest to a given configuration is depicted in the 3D space. Inside the polygon, the configuration of excess electrons is stable. The pump can be operated by applying a set of sinusoidally varying gate voltages, whose trajector in the 3D space is presented
Keywords :
beam handling equipment; electric current measurement; measurement standards; tunnelling; voltage measurement; 3D space; characteristics; charging energy; equilibrium energy planes; polygon; quantum current standard; quantum voltage standard; sinusoidal gate voltage; sinusoidally varying gate voltage; three dimensional gate-voltage space; three-gate single electron pump; tunnel junctions; Capacitance; Delay; Electrons; Frequency; Metrology; Space charge; Space vector pulse width modulation; Tunneling; Uncertainty; Voltage control;
fLanguage :
English
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9456
Type :
jour
DOI :
10.1109/19.377907
Filename :
377907
Link To Document :
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