Effect of crystalline quality of diamond film to the propagation loss of surface acoustic wave devices

Author

Fujii, Satoshi ; Shikata, Shinichi ; Uemura, Tomoki ; Nakahata, Hideaki ; Harima, Hiroshi

Author_Institution

IEEE MTT Soc., Japan Soc. of Appl. Phys., Kumamoto, Japan

Volume

52

Issue

10

fYear

2005

Firstpage

1817

Lastpage

1822

Abstract

Diamond films with various crystal qualities were grown by chemical vapor deposition on silicon wafers. Their crystallinity was characterized by Raman scattering and electron backscattering diffraction. By fabricating a device structure for surface acoustic wave (SAW) using these diamond films, the propagation loss was measured at 1.8 GHz arid compared with the crystallinity. It was found that the propagation loss was lowered in relatively degraded films having small crystallites, a narrow distribution in the diamond crystallite size, and preferential grain orientation. This experiment clarifies diamond film characteristics required for high-frequency applications in SAW filters.

Keywords

Raman spectra; acoustic wave propagation; chemical vapour deposition; diamond; electron backscattering; grain size; high-frequency effects; surface acoustic wave devices; thin films; 1.8 GHz; C; Raman scattering; Si; chemical vapor deposition; diamond film; electron backscattering diffraction; grain orientation; propagation loss; silicon wafers; surface acoustic wave devices; Acoustic waves; Backscatter; Chemical vapor deposition; Crystallization; Electrons; Propagation losses; Raman scattering; Semiconductor films; Silicon; Surface acoustic wave devices;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/TUFFC.2005.1561637

Filename

1561637