Block Replicate Gates for Ion-Implanted Bubble Devices

A two-layer conductor is used for replicating bubbles in ion-implanted bubble devices. The first layer is a parallel conductor used to cut the bubbles which have been stretched by the hairpin conductor in the second layer. There was sufficient operation margin even with a low drive field and a bias field margin of 22.5 Oe was obtained at a drive field of 60 Oe. Error brought on by the stretch pulse will be improved by lengthening the corner pattern. In addition, replicate-in/transfer-out operation was verified.