• DocumentCode
    767670
  • Title

    1.5 to 0.87 μm optical upconversion device fabricated by wafer fusion

  • Author

    Ban, D. ; Luo, H. ; Liu, H.C. ; SpringThorpe, A.J. ; Glew, R. ; Wasilewski, Z.R. ; Buchanan, M.

  • Author_Institution
    Inst. for Microstructural Sci., Nat. Res. Council, Ottawa, Ont., Canada
  • Volume
    39
  • Issue
    15
  • fYear
    2003
  • fDate
    7/24/2003 12:00:00 AM
  • Firstpage
    1145
  • Lastpage
    1147
  • Abstract
    A 1.5 to 0.87 μm wavelength optical upconversion device fabricated by wafer fusion is proposed and demonstrated. The device consists of an In0.53Ga0.47As/InP pin photodetector and a GaAs/AlGaAs light emitting diode, which were grown separately and wafer bonded together. The internal upconversion quantum efficiency is measured to be 18% at room temperature.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; optical frequency conversion; p-i-n photodiodes; photodetectors; 1.5 to 0.87 micron; 18 percent; In0.53Ga0.47As-InP; In0.53Ga0.47As/InP; internal upconversion quantum efficiency; light emitting diode; optical upconversion device; pin photodetector; wafer fusion;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030732
  • Filename
    1222698
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=767670