Highly reliable high performance waveguide-integrated InP/InGaAs pin photodiodes for 40 Gbit/s fibre-optical communication application

Author

Wang, Guibin ; Yoneda, Yoshihiro ; Aono, Hiroshi ; Araki, Kotaro ; Takechi, Masaru ; Odagawa, T. ; Fujii, Teruya ; Sato, Kiminori ; Kobayashi, Masato

Author_Institution

Fujitsu Quantum Devices Ltd., Yamanashi, Japan

Volume

39

Issue

15

fYear

2003

fDate

7/24/2003 12:00:00 AM

Firstpage

1147

Lastpage

1149

Abstract

Waveguide-integrated pin photodiodes (WGpinPDs) planar-embedded by a semi-insulating (SI) InP buried layer exhibit very stable dark current characteristics after aging tests for over 8000 h at 175°C with a bias voltage of -10 V. A wear-out failure rate of much less than 1 failure in time (FIT) after 25 years of operation at 40°C was primarily estimated. Stable operation for over 5000 h were also confirmed under high power optical input aging test at an atmosphere temperature of 85°C. For the optical receiver module using the WGpinPD and a GaAs pHEMT travelling wave amplifier (TWA), a recorded minimum received power of -11.2 dBm at 40 Gbit/s was obtained for the first time.

Keywords

III-V semiconductors; ageing; gallium arsenide; indium compounds; optical fibre communication; optical receivers; p-i-n photodiodes; semiconductor device reliability; -10 V; 175 degC; 40 Gbit/s; 40 degC; 8000 h; 85 degC; InP-InGaAs; InP/InGaAs; WGpinPDs; aging tests; atmosphere temperature; bias voltage; failure in time; fibre-optical communication application; minimum received power; optical input aging test; optical receiver module; pHEMT travelling wave amplifier; stable dark current characteristics; waveguide-integrated pin photodiodes; wear-out failure rate;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20030725

Filename

1222699