Title :
Infrared quantum well intersubband modulator
Author :
Liu, H.C. ; Song, C.Y. ; SpringThorpe, A.J. ; Aers, G.C.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council, Ottawa, Ont., Canada
fDate :
7/24/2003 12:00:00 AM
Abstract :
A modulator based on intersubband transition in asymmetrical quantum wells having a large linear Stark shift is demonstrated. Using a high doping density and a large number of quantum wells, a strong intersubband absorption (∼85%) is achieved. With an appropriate asymmetrical quantum well design, a large linear Stark shift is obtained.
Keywords :
III-V semiconductors; Stark effect; electro-optical modulation; gallium arsenide; quantum well devices; GaAs-AlGaAs; IR quantum well intersubband modulator; asymmetrical quantum wells; high doping density; infrared QW intersubband modulator; intersubband absorption; intersubband transition; linear Stark shift;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030738
