• DocumentCode
    767787
  • Title

    Stability of thick film piezoresistors under large pressure cycles at elevated temperature

  • Author

    Amin, Ahmed

  • Author_Institution
    Sensors & Sonar Syst. Dept., Naval Undersea Warfare Center, Newport, RI, USA
  • Volume
    52
  • Issue
    11
  • fYear
    2005
  • Firstpage
    1894
  • Lastpage
    1896
  • Abstract
    The resistance change of ruthenium based metal-insulator-metal (MIM) thick film resistors with hydrostatic pressure exhibits excellent linearity, no hysteresis, a small temperature dependency, and an order of magnitude greater sensitivity than the longitudinal mode. The effect of long-term 10/sup 6/ hydrostatic pressure cycles (0 to /spl sim/21 MPa) at 135/spl deg/C on response linearity, sensitivity (span), and the resistance at zero pressure R/sub 0/ (offset) have been established for a commercial MIM composition. No change in linearity, sensitivity, and offset was observed up to 10/sup 4/ cycles. After 10/sup 6/ cycles the offset and sensitivity changed by less than 1% and 0.5%, respectively. Other parameters remained unchanged. The results are analyzed in terms of conduction models of this system.
  • Keywords
    MIM devices; piezoresistive devices; ruthenium; thick film resistors; 135 degC; MIM; Ru; conduction models; hysteresis; resistance change; ruthenium based metal-insulator-metal thick film resistors; thick film piezoresistors; Linearity; Piezoresistance; Piezoresistive devices; Resistors; Silicon; Stability; Stress; Temperature dependence; Temperature sensors; Thick films;
  • fLanguage
    English
  • Journal_Title
    Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-3010
  • Type

    jour

  • DOI
    10.1109/TUFFC.2005.1561656
  • Filename
    1561656