InGaAs/GaAs 0.98 mu m semi-insulating blocked planar buried heterostructure lasers employing InGaAsP cladding layers

Author

Young, M.G. ; Koren, U. ; Miller, B.I. ; Raybon, G. ; Burrus, C.A.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

Volume

4

Issue

2

fYear

1992

Firstpage

116

Lastpage

118

Abstract

MOVPE-grown InGaAs/GaAs strained-layered lasers emitting at 0.98 mu m have been fabricated using InGaAsP as an alternative to AlGaAs in the cladding layers. Semi-insulating blocked planar buried heterostructure lasers 2.5 mu m wide have thresholds as low as 8 mA for 350 mu m long devices. With the addition of reflective coatings, slope efficiencies of 0.67 mW/mA and output powers of 60 mW at 160 mA have been obtained.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 0.98 micron; 160 mA; 2.5 micron; 350 micron; 60 mW; 8 mA; IR sources; InGaAs-GaAs-InGaAsP; MOVPE-grown; cladding layers; diode lasers; lasing thresholds; metallorganic vapour phase epitaxial growth; output powers; reflective coatings; semi-insulating blocked planar buried heterostructure lasers; semiconductors; slope efficiencies; Epitaxial growth; Erbium-doped fiber amplifier; Erbium-doped fiber lasers; Etching; Gallium arsenide; Indium gallium arsenide; Pump lasers; Quantum well lasers; Temperature; Thermal conductivity;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.122333

Filename

122333