• DocumentCode
    768057
  • Title

    Germanium: The semiconductor comeback material

  • Author

    Todi, R.M. ; Heyns, M.M.

  • Volume
    26
  • Issue
    2
  • fYear
    2007
  • Firstpage
    34
  • Lastpage
    38
  • Abstract
    In this paper, Ge the comeback semiconductor material is discussed. It is used as an enabling material for the next generation of device technology primarily due to its high carrier mobility. Ge, along with other high-mobility such as III/V compounds, are projected to be the the new range of semiconductor material. The technology for the growth of Ge and (In) GaAs active areas on an Si substrate must be developed
  • Keywords
    III-V semiconductors; carrier mobility; germanium alloys; substrates; Ge; Germanium; III-V semiconductor; Si substrate; carrier mobility; semiconductor material; Capacitive sensors; Charge carrier processes; Crystalline materials; Electronics industry; Germanium; Gold; MOSFETs; Semiconductor materials; Silicon; Uniaxial strain;
  • fLanguage
    English
  • Journal_Title
    Potentials, IEEE
  • Publisher
    ieee
  • ISSN
    0278-6648
  • Type

    jour

  • DOI
    10.1109/MP.2007.343055
  • Filename
    4147749
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=768057