Abstract :
In this paper, Ge the comeback semiconductor material is discussed. It is used as an enabling material for the next generation of device technology primarily due to its high carrier mobility. Ge, along with other high-mobility such as III/V compounds, are projected to be the the new range of semiconductor material. The technology for the growth of Ge and (In) GaAs active areas on an Si substrate must be developed
Keywords :
III-V semiconductors; carrier mobility; germanium alloys; substrates; Ge; Germanium; III-V semiconductor; Si substrate; carrier mobility; semiconductor material; Capacitive sensors; Charge carrier processes; Crystalline materials; Electronics industry; Germanium; Gold; MOSFETs; Semiconductor materials; Silicon; Uniaxial strain;
