The influence of facet roughness on the reflectivities of etched-angled facets for superluminescent diodes and optical amplifiers

Author

Lin, C.F.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Itahaca, NY, USA

Volume

4

Issue

2

fYear

1992

Firstpage

127

Lastpage

129

Abstract

The author reports on the characterization of the roughness of angled facets of GaAs/AlGaAs superluminescent diodes (or optical amplifiers) fabricated by chemically assisted ion beam etching and its influence on reflectivities. For the first time, atomic force microscopy (AFM) is used to directly measure the etched-facet roughness. Those etched-angled facets with roughness exhibit reflectivity at least an order of magnitude higher than completely smooth angled facets. A model is proposed to relate the reflectivity to the roughness measured by AFM.<>

Keywords

atomic force microscopy; light emitting diodes; luminescent devices; reflectivity; semiconductor junction lasers; sputter etching; surface structure; surface topography measurement; GaAs-AlGaAs; atomic force microscopy; chemically assisted ion beam etching; etched-angled facets; facet roughness; facet roughness measurement; optical amplifiers; reflectivities; semiconductors; superluminescent diodes; Atom optics; Atomic force microscopy; Atomic measurements; Etching; Force measurement; Gallium arsenide; Particle beam optics; Reflectivity; Stimulated emission; Superluminescent diodes;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.122337

Filename

122337