Title :
GaAs-on-Si modulator using a buried silicide reflector
Author :
Gooseen, K.W. ; Cunningham, J.E. ; White, A.E. ; Short, K.T. ; Jan, W.Y. ; Walker, J.A.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
A surface-normal GaAs quantum-well absorption modulator has been produced atop a silicon wafer that has been implanted with Co and annealed to form a silicide layer. The silicide layer functions as a mirror allowing reflection mode operation. This substantially reduces the thickness of the modulator compared to devices with AlGaAs-AlAs multilayer reflector stacks. A contrast ratio of 2.5 was obtained with 25 V operation.<>
Keywords :
III-V semiconductors; annealing; cobalt; gallium arsenide; integrated optics; ion implantation; light absorption; mirrors; molecular beam epitaxial growth; optical modulation; reflectivity; semiconductor growth; CoSi/sub 2/; GaAs-Si; GaAs-on-Si modulator; Si substrate; annealed; buried silicide reflector; contrast ratio; ion implantation; mirror; optical modulator thickness; quantum-well absorption modulator; reflection mode operation; semiconductor doping; semiconductors; silicon wafer; surface-normal; Annealing; Bandwidth; Gallium arsenide; Integrated circuit interconnections; Mirrors; Quantum well devices; Reflectivity; Silicides; Silicon; Surface topography;
Journal_Title :
Photonics Technology Letters, IEEE
