GaAs-on-Si modulator using a buried silicide reflector

Author

Gooseen, K.W. ; Cunningham, J.E. ; White, A.E. ; Short, K.T. ; Jan, W.Y. ; Walker, J.A.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

Volume

4

Issue

2

fYear

1992

Firstpage

140

Lastpage

142

Abstract

A surface-normal GaAs quantum-well absorption modulator has been produced atop a silicon wafer that has been implanted with Co and annealed to form a silicide layer. The silicide layer functions as a mirror allowing reflection mode operation. This substantially reduces the thickness of the modulator compared to devices with AlGaAs-AlAs multilayer reflector stacks. A contrast ratio of 2.5 was obtained with 25 V operation.<>

Keywords

III-V semiconductors; annealing; cobalt; gallium arsenide; integrated optics; ion implantation; light absorption; mirrors; molecular beam epitaxial growth; optical modulation; reflectivity; semiconductor growth; CoSi/sub 2/; GaAs-Si; GaAs-on-Si modulator; Si substrate; annealed; buried silicide reflector; contrast ratio; ion implantation; mirror; optical modulator thickness; quantum-well absorption modulator; reflection mode operation; semiconductor doping; semiconductors; silicon wafer; surface-normal; Annealing; Bandwidth; Gallium arsenide; Integrated circuit interconnections; Mirrors; Quantum well devices; Reflectivity; Silicides; Silicon; Surface topography;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.122341

Filename

122341