Title :
Analytical results for the I-V characteristics of a fully depleted SOI-MOSFET
Author :
Morris, H. ; Cumberbatch, E. ; Tyree, V. ; Abebe, H.
Author_Institution :
Dept. of Math., San Jose State Univ., Claremont, CA, USA
Abstract :
Explicit formulae for the I-V characteristics of an SOI/SOS MOSFET operating in the fully depleted mode are derived by extending the asymptotic method of Ward. A detailed comparison with test data is presented and the model is shown to be effective over a range of device geometries for a half micrometre technology and voltages up to and including the kink attributable to impact ionisation.
Keywords :
MOSFET; SPICE; impact ionisation; semiconductor device models; silicon-on-insulator; I-V characteristics; SOI/SOS MOSFET; analytical results; asymptotic method; fully depleted SOI-MOSFET; impact ionization;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings
DOI :
10.1049/ip-cds.20050018
