• DocumentCode
    768218
  • Title

    Analytical results for the I-V characteristics of a fully depleted SOI-MOSFET

  • Author

    Morris, H. ; Cumberbatch, E. ; Tyree, V. ; Abebe, H.

  • Author_Institution
    Dept. of Math., San Jose State Univ., Claremont, CA, USA
  • Volume
    152
  • Issue
    6
  • fYear
    2005
  • Firstpage
    630
  • Lastpage
    632
  • Abstract
    Explicit formulae for the I-V characteristics of an SOI/SOS MOSFET operating in the fully depleted mode are derived by extending the asymptotic method of Ward. A detailed comparison with test data is presented and the model is shown to be effective over a range of device geometries for a half micrometre technology and voltages up to and including the kink attributable to impact ionisation.
  • Keywords
    MOSFET; SPICE; impact ionisation; semiconductor device models; silicon-on-insulator; I-V characteristics; SOI/SOS MOSFET; analytical results; asymptotic method; fully depleted SOI-MOSFET; impact ionization;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices and Systems, IEE Proceedings
  • Publisher
    iet
  • ISSN
    1350-2409
  • Type

    jour

  • DOI
    10.1049/ip-cds.20050018
  • Filename
    1561695
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=768218