Title :
High-frequency annealing effects on ionizing radiation response of MOSFET
Author :
Okabe, Takeaki ; Kato, Masataka ; Katsueda, Mineo ; Kamimura, Hiroshi ; Takei, Ichiro
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
12/1/1990 12:00:00 AM
Abstract :
The effects of high-frequency AC bias on the ionizing radiation response of MOSFETs are studied. Radiation-induced interface traps are annealed out during irradiation and postirradiation annealing when an AC bias is applied with a zero offset voltage. In addition, the recovery of 40-MHz-biased devices agreed with that of 860-MHz-biased ones for the same total number of alternating cycles of AC gate bias voltage. It is concluded that an alternating transition between inversion and accumulation caused by high-frequency AC bias is responsible, and the total number of transition cycles may be relevant for the annealing of radiation-induced interface traps
Keywords :
annealing; gamma-ray effects; insulated gate field effect transistors; interface electron states; semiconductor device testing; 40 MHz; 860 MHz; MOSFET; accumulation; alternating transition; gamma irradiation; high-frequency AC bias; interface traps; inversion; ionizing radiation response; postirradiation annealing; transition cycles; zero offset voltage; Aging; Annealing; Ionizing radiation; Laboratories; MOS capacitors; MOS devices; MOSFET circuits; Power MOSFET; Radio frequency; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
