Title :
The effect of ionizing radiation on sol-gel ferroelectric PZT capacitors
Author :
Benedetto, J.M. ; Moore, R.A. ; McLean, F.B. ; Brody, P.S. ; Dey, S.K.
Author_Institution :
Harry Diamond Labs., Adelphi, MD, USA
fDate :
12/1/1990 12:00:00 AM
Abstract :
Ferroelectric (FE) thin-film capacitors are irradiated to 100 Mrad(Si) with 10-keV X-rays. Some of the FE hysteresis loops show distortion at 5 Mrad(Si). The type and degree of distortion are dependent on the polarization state and/or the applied field during irradiation. Preliminary results indicate that a fraction of the radiation-induced damage can be removed simply by cycling the FE capacitor with a 20-kHz square wave. The amount of damage removed is dependent upon the radiation conditions
Keywords :
X-ray effects; dielectric hysteresis; dielectric polarisation; ferroelectric storage; lead compounds; sol-gel processing; thin film capacitors; 10 keV; 108 rad; PZT; PbZrO3TiO3; X-ray irradiation; applied field; ferroelectric hysteresis loops; ionizing radiation; polarization state; radiation-induced damage; sol-gel ferroelectric PZT capacitors; square wave cycling; Capacitors; Electrodes; Ferroelectric materials; Hysteresis; Ionizing radiation; Iron; Laboratories; Polarization; Transistors; Zirconium;
Journal_Title :
Nuclear Science, IEEE Transactions on
