An improved displacement damage monitor LED

Author

Barry, A.L. ; Maxseiner, R. ; Wojcik, R. ; Briere, M.A. ; Braunig, D.

Author_Institution

Commun. Res. Centre, Ottawa, Ont., Canada

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

1726

Lastpage

1731

Abstract

A frequency-domain technique for measuring carrier lifetime in GaAs light-emitting-diode (LED) displacement damage monitors capable of high sensitivity and repeatability is developed. Applications of this technique that take advantage of the high sensitivity of this method, including the measurement of the threshold energy for lattice displacement in GaAs, are described. The measured minimum electron energy for displacement damage was 270±15 keV, corresponding to a threshold atomic displacement energy of 10.0±0.7 eV, assuming the defect is a displaced arsenic atom

Keywords

III-V semiconductors; carrier lifetime; electron beam effects; frequency response; gallium arsenide; gamma-ray effects; light emitting diodes; monitoring; 10 eV; 270 keV; GaAs; LED; carrier lifetime; displaced As atom; displacement damage monitor; frequency response; frequency-domain technique; gamma irradiation; high sensitivity; lattice displacement; minimum electron energy; repeatability; threshold atomic displacement energy; threshold energy; Atomic measurements; Charge carrier lifetime; Displacement measurement; Electrons; Energy measurement; Frequency measurement; Gallium arsenide; Lattices; Light emitting diodes; Monitoring;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101183

Filename

101183