Pulsed laser-induced charge collection in GaAs MESFETs

Author

Knudson, A.R. ; Campbell, A.B. ; McMorrow, D. ; Buchner, S. ; Kang, K. ; Weatherford, T. ; Srinivas, V. ; Swartzlander, G.A., Jr. ; Chen, Y.J.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

1909

Lastpage

1915

Abstract

Pulsed picosecond lasers with variable wavelength were used to investigate the details of charge collection in GaAs MESFETs. In short gate-length devices, charge collection at the drain may be much larger than at the gate and greater than the charge produced by the laser pulses. The results show that a pulsed laser is very useful in studies of charge collection. Two particularly useful features are the absence of the radiation damage which accompanies ion measurements and the ability to observe visually the point at which charge is being produced in the device

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; laser beam effects; semiconductor device testing; GaAs; MESFETs; charge production; drain charge collection transient; picosecond lasers; pulsed laser induced charge collection; short gate-length devices; Charge measurement; Current measurement; Gallium arsenide; MESFETs; Optical pulses; Performance evaluation; Pulse measurements; Semiconductor lasers; Surface emitting lasers; Wavelength measurement;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101208

Filename

101208