The behaviour of measured SEU at low altitude during periods of high solar activity [spacecraft memories]

Author

Harboe-Sorensen, R. ; Daly, E.J. ; Underwood, C.I. ; Ward, J. ; Adams, L.

Author_Institution

ESTEC, Noordwijk, Netherlands

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

1938

Lastpage

1946

Abstract

The UoSAT-2 spacecraft, launched in 1984 into a polar orbit at an altitude of 700 km, has a number of systems which have been observed to experience single-event upsets at significant rates. During the year 1989, several solar flare events occurred which elevated the upset rates at high latitudes. The October 19 event, in particular, resulted in very high high-latitude upset rates. The data are separated and analyzed, deriving upset rates for the various memory devices under quiet cosmic-ray, South Atlantic anomaly, and solar flare conditions. The results of the heavy ion and proton testing of UoSAT memories undertaken in order to compare predictions and observations are presented

Keywords

DRAM chips; SRAM chips; aerospace instrumentation; artificial satellites; cosmic ray effects and interactions; integrated circuit testing; ion beam effects; proton effects; solar flares; CMOS SRAMs; NMOS DRAMs; SEU; South Atlantic anomaly; UoSAT-2 spacecraft; heavy ion testing; high solar activity; low altitude; memory devices; polar orbit; proton testing; quiet cosmic ray conditions; single-event upsets; solar flare events; upset rates; Artificial satellites; MOS devices; Monitoring; Protons; Random access memory; Read-write memory; Single event upset; Space technology; Space vehicles; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101212

Filename

101212