Swap Gate of the Dual Conductor Current Access Device

Swap gates were designed for dual conductor current access bubble devices, and their performance investigated using an enlarged model and by computer simulations. The enlarged model experiments were used to measure magnetic field distributions; simulations employed parameters for typical (YBi)3(GaFe)5O12 bubble films. Driving relies on a sequence of currents, with swap gates operated by changing this sequence. The swap gate pattern was gradually improved through repeated testing, and for a driving current density of 1.5 mA/¿m a satisfactory maximum bias margin of 12.3 percent was achieved for operation in all modes.