DocumentCode :
768906
Title :
Two parameter Bendel model calculations for predicting proton induced upset [ICs]
Author :
Stapor, W.J. ; Meyers, J.P. ; Langworthy, J.B. ; Petersen, E.L.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
Volume :
37
Issue :
6
fYear :
1990
fDate :
12/1/1990 12:00:00 AM
Firstpage :
1966
Lastpage :
1973
Abstract :
The two-parameter model of W.L. Bendel and E.L. Petersen (1984) represents an improvement over the existing single-parameter model in terms of the goodness of fit to actual proton upset data. It especially gives a better fit to the data from devices with small feature dimensions, which ultimately leads to a more accurate proton error rate prediction. Small feature sized devices have a proton upset energy dependence that cannot be accurately described with the one-parameter model and only one data point. There are no substantial differences in proton error rate predictions from one- and two-parameter approaches for older devices with larger feature sizes
Keywords :
CMOS integrated circuits; MOS integrated circuits; integrated circuit testing; proton effects; 10 to 2000 MeV; Bendel model; CMOS SRAM; CMOS/SOS device; NMOS SRAM; NMOS device; SEU; goodness of fit; proton error rate prediction; proton induced upset; small feature dimensions; two-parameter model; Belts; Energy measurement; Extraterrestrial measurements; Kinetic energy; Laboratories; Predictive models; Protons; Shape measurement; Silicon; Single event upset;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.101216
Filename :
101216
Link To Document :
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