• DocumentCode
    768906
  • Title

    Two parameter Bendel model calculations for predicting proton induced upset [ICs]

  • Author

    Stapor, W.J. ; Meyers, J.P. ; Langworthy, J.B. ; Petersen, E.L.

  • Author_Institution
    US Naval Res. Lab., Washington, DC, USA
  • Volume
    37
  • Issue
    6
  • fYear
    1990
  • fDate
    12/1/1990 12:00:00 AM
  • Firstpage
    1966
  • Lastpage
    1973
  • Abstract
    The two-parameter model of W.L. Bendel and E.L. Petersen (1984) represents an improvement over the existing single-parameter model in terms of the goodness of fit to actual proton upset data. It especially gives a better fit to the data from devices with small feature dimensions, which ultimately leads to a more accurate proton error rate prediction. Small feature sized devices have a proton upset energy dependence that cannot be accurately described with the one-parameter model and only one data point. There are no substantial differences in proton error rate predictions from one- and two-parameter approaches for older devices with larger feature sizes
  • Keywords
    CMOS integrated circuits; MOS integrated circuits; integrated circuit testing; proton effects; 10 to 2000 MeV; Bendel model; CMOS SRAM; CMOS/SOS device; NMOS SRAM; NMOS device; SEU; goodness of fit; proton error rate prediction; proton induced upset; small feature dimensions; two-parameter model; Belts; Energy measurement; Extraterrestrial measurements; Kinetic energy; Laboratories; Predictive models; Protons; Shape measurement; Silicon; Single event upset;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.101216
  • Filename
    101216