A study of the effects of processing on the response of implanted buried oxides to total dose irradiation

Author

Brady, Frederick T. ; Li, Sheng S. ; Krull, Wade A.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

1995

Lastpage

2000

Abstract

For SOI (silicon-on-insulator) materials formed by oxygen implantation (the SIMOX method), the charge trapping properties of the buried oxide layer are of particular interest. The aim is to examine the effects of changing the various SIMOX process parameters on the charge trapping of the buried oxide layer. The buried oxide characteristics were studied directly by high-frequency C-V measurements. The effects of varying the implant oxygen dose and the postimplant anneal temperature and time are studied. In addition, the postirradiation charge trapping is correlated with the preradiation charge densities. A major result is that a large increase in the film donor density with X-ray dose is seen for samples implanted with a low oxygen dose

Keywords

X-ray effects; radiation hardening (electronics); semiconductor technology; semiconductor-insulator boundaries; SIMOX process parameters; SOI materials; SiO₂-Si; X-ray dose; buried oxide characteristics; buried oxide layer; charge trapping properties; effects of processing; film donor density; high-frequency C-V measurements; isolation technologies; postimplant anneal temperature; postirradiation charge trapping; preradiation charge densities; response of implanted buried oxides; silicon-on-insulator; total dose irradiation; Annealing; Capacitors; Circuits; Implants; Radiation hardening; Semiconductor films; Silicon on insulator technology; Substrates; Temperature; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101220

Filename

101220