Radiation hardened SOS MOSFET technology for infrared focal plane readouts

A silicon-on-sapphire (SOS) MOSFET technology with a body contact technique is shown to provide a reduced kink effect and no edge leakage for a 500 krad(Si) Co-60 dose at 80 K. The approach utilizes a conventional local oxidation of silicon (LOCOS) field implant process with a silicon conducting layer remaining beneath the field oxide. For the design, with the body connection beneath the field oxide, the contact can be made at significant distances from the device and potentially only one contract is required for each well with a number of transistors in a well. Additional advantages of the approach are greater packing densities, body connection to both sides of the channel and compatibility with standard bulk CMOS field oxide processes