Title :
Ionizing radiation effects on HgCdTe MIS devices
Author :
Moriwaki, M.M. ; Srour, J.R. ; Lou, L.F. ; Waterman, J.R.
Author_Institution :
Northrop Electron. Syst. Div., Hawthorne, CA, USA
fDate :
12/1/1990 12:00:00 AM
Abstract :
Total-dose irradiations of HgCeTe MIS capacitors containing an anodic-sulfide interface passivation layer reveal electron and hole trapping in the insulator and irradiation-bias dependences of flatband voltage shift, interface trap density, surface generation velocity, and storage time. Under positive irradiation bias, charge buildup in the insulator is dominated by trapped holes. Isochronal annealing studies reveal nearly complete recovery of the flatband voltage at ~275 K for an irradiation to 105 rad(Si) at ~80 K. Significant neutralization of trapped holes is evident if the applied bias is changed during irradiation
Keywords :
II-VI semiconductors; gamma-ray effects; infrared detectors; mercury compounds; metal-insulator-semiconductor devices; radiation hardening (electronics); 1E5 rad; 275 K; 80 K; 60Co gamma radiation; HgCdTe; HgCeTe MIS capacitors; anodic-sulfide interface passivation layer; charge buildup; electron trapping; flatband voltage recovery; flatband voltage shift; hole trapping; interface trap density; ionizing radiation effects; irradiation-bias dependences; isochronal annealing; neutralization of trapped holes; positive irradiation bias; semiconductors; storage time; surface generation velocity; total dose irradiations; trapped holes; Capacitance-voltage characteristics; Capacitors; Electron traps; Infrared detectors; Insulation; Ionizing radiation; Laboratories; MIS devices; Voltage; Zinc compounds;
Journal_Title :
Nuclear Science, IEEE Transactions on
