Simulation of the transient radiation response for GaAs thyristors

Author

Keshavarz, A.A. ; Carson, R.F. ; Weaver, H.T. ; Hughes, R.C. ; Hawkins, C.F.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

2058

Lastpage

2064

Abstract

Numerical simulations of the transient response of gallium arsenide (GaAs) thyristors to bursts of ionizing radiation are reported. The device simulator BAMBI 2.0, with incorporated GaAs transport models, is used. BAMBI is a 2-D time-dependent transport code using accurate models, such as doping- and electric-field-dependent carrier mobilities and avalanche multiplication. Furthermore, the physical parameters can be very easily modified to isolate the effect of any particular parameter in the device response. This feature is used to study the effect of carrier lifetime on the switching behavior of the irradiated GaAs thyristors by comparing simulation results with the experimental data. The structures simulated are 1-D structures, but the full 2-D simulation is used. Good agreement exists between experimental and simulation results, including the effects of carrier lifetime on the radiation response and the phenomena of delayed switching

Keywords

III-V semiconductors; X-ray effects; digital simulation; gallium arsenide; semiconductor device models; thyristors; 1-D structures; 2-D simulation; 2-D time-dependent transport code; BAMBI 2.0; GaAs thyristors; GaAs transport models; avalanche multiplication; bursts of ionizing radiation; carrier lifetime; delayed switching; device simulator; doping-dependent carrier mobilities; effects of carrier lifetime; electric-field-dependent carrier mobilities; experimental data; numerical simulation; semiconductors; simulation results; switching behavior; transient radiation response; Computational modeling; Doping; Gallium arsenide; Ice; Laboratories; Pulse measurements; Semiconductor process modeling; Shape measurement; Thyristors; Transient response;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101229

Filename

101229