Title :
Heavy ion total fluence effects in GaAs devices
Author :
Anderson, W.T. ; Knudson, A.R. ; Meulenberg, A. ; Hung, H.-L. ; Roussos, J.A. ; Kiriakidis, G.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
fDate :
12/1/1990 12:00:00 AM
Abstract :
Heavy ion radiation effects were studied in GaAs FETs, monolithic microwave integrated circuits (MMICs), and high-electron-mobility transistors (HEMTs). Degradation of GaAs FETs, MMICs, and HEMTs occurred at about 109 cm-2 for 14.5-MeV Si and at 1012 cm-2 for 2-MeV protons. Carrier removal resulting from displacement damage in the active channel, or in the doping layer in the case of HEMTs, is the primary reason for the decrease in drain current and gain and the increase in noise figure. Decrease in mobility is also a contributing factor. HEMTs were found to degrade in gain and noise figure at higher levels of irradiation, primarily because of the initial higher dopant concentration in the AlGaAs N+ doping layer
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; field effect transistors; gallium arsenide; high electron mobility transistors; ion beam effects; proton effects; 14.5 MeV; 2 MeV; GaAs FETs; GaAs devices; GaAs-AlGaAs; HEMTs; MMICs; Si ions; active channel; carrier removal; decrease in drain current; degradation; displacement damage; doping layer; gain decrease; heavy ion radiation effects; heavy ion total fluence effects; high-electron-mobility transistors; mobility decrease; monolithic microwave integrated circuits; noise figure increase; semiconductors; Degradation; Doping; FETs; Gallium arsenide; HEMTs; Ion radiation effects; MMICs; MODFETs; Microwave devices; Noise figure;
Journal_Title :
Nuclear Science, IEEE Transactions on
