Heavy ion total fluence effects in GaAs devices

Author

Anderson, W.T. ; Knudson, A.R. ; Meulenberg, A. ; Hung, H.-L. ; Roussos, J.A. ; Kiriakidis, G.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

2065

Lastpage

2070

Abstract

Heavy ion radiation effects were studied in GaAs FETs, monolithic microwave integrated circuits (MMICs), and high-electron-mobility transistors (HEMTs). Degradation of GaAs FETs, MMICs, and HEMTs occurred at about 10⁹ cm^-2 for 14.5-MeV Si and at 10¹² cm^-2 for 2-MeV protons. Carrier removal resulting from displacement damage in the active channel, or in the doping layer in the case of HEMTs, is the primary reason for the decrease in drain current and gain and the increase in noise figure. Decrease in mobility is also a contributing factor. HEMTs were found to degrade in gain and noise figure at higher levels of irradiation, primarily because of the initial higher dopant concentration in the AlGaAs N⁺ doping layer

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; field effect transistors; gallium arsenide; high electron mobility transistors; ion beam effects; proton effects; 14.5 MeV; 2 MeV; GaAs FETs; GaAs devices; GaAs-AlGaAs; HEMTs; MMICs; Si ions; active channel; carrier removal; decrease in drain current; degradation; displacement damage; doping layer; gain decrease; heavy ion radiation effects; heavy ion total fluence effects; high-electron-mobility transistors; mobility decrease; monolithic microwave integrated circuits; noise figure increase; semiconductors; Degradation; Doping; FETs; Gallium arsenide; HEMTs; Ion radiation effects; MMICs; MODFETs; Microwave devices; Noise figure;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101230

Filename

101230