Title :
Modeling and Characterization of On-Chip Transformers for Silicon RFIC
Author :
EL-Gharniti, Ouail ; Kerhervé, Eric ; Bégueret, Jean-Baptiste
Author_Institution :
IXL Microelectron. Lab., Bordeaux I Univ., Talence
fDate :
4/1/2007 12:00:00 AM
Abstract :
A broadband and scalable lumped-element model for silicon on-chip transformers is presented. Model elements are driven from layout and process technology specifications. We provide simple and accurate expressions for evaluating the self inductance and the mutual coupling coefficient. The effects of various layout parameters, including transformer area, number of turns, and turns ratio, on transformer electrical response have been investigated. Model accuracy is demonstrated by comparing simulated and measured S-parameters, minimum insertion loss, quality factor, coils inductance, and magnetic coupling of several transformers with a wide range of configurations
Keywords :
Q-factor; S-parameters; elemental semiconductors; equivalent circuits; integrated circuit design; integrated circuit modelling; lumped parameter networks; radiofrequency integrated circuits; silicon; transformers; S-parameters; Si; coils inductance; equivalent-circuit model; insertion loss; layout parameters; magnetic coupling; mutual coupling coefficient; patterned ground shield; process technology specifications; quality factor; radiofrequency integrated circuits; scalable lumped-element model; self inductance; silicon RFIC; silicon on-chip transformers; transformer electrical response; Coils; Inductance measurement; Insertion loss; Loss measurement; Mutual coupling; Q factor; Radiofrequency integrated circuits; Scattering parameters; Silicon; Transformers; Equivalent-circuit model; RF integrated circuit (RFIC) design; magnetic coupling; on-chip transformers; patterned ground shield (PGS); quality ($Q$) factor;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2007.893647
