DocumentCode
769104
Title
Perpendicular Magnetic Anisotropy in Amorphous TbCo Sputtered Films
Author
Shimanuki, S. ; Ichihara, K. ; Yasuda, N. ; Ito, K. ; Kon, K.
Author_Institution
Toshiba R and D Center
Volume
2
Issue
4
fYear
1987
fDate
4/1/1987 12:00:00 AM
Firstpage
338
Lastpage
339
Abstract
Effects of sputtering conditions on perpendicular magnetic anisotropy in amorphous TbCo films prepared by two target magnetron cosputtering have been studied. The perpendicular magnetic anisotropy of amorphous TbCo films depended strongly on negative substrate bias voltage and Ar gas pressure. TbCo films deposited at zero substrate bias voltage and low Ar gas pressure (2 ~ 5 mtorr) showed a positive uniaxial magnetic anisotropy (Ku ) of 3 ~ 4 Ã 106 erg/cm3 in the range of 13 ~ 31 at% Tb.
Keywords
Amorphous magnetic materials; Amorphous materials; Argon; Magnetic anisotropy; Magnetic films; Perpendicular magnetic anisotropy; Perpendicular magnetic recording; Sputtering; Substrates; Voltage;
fLanguage
English
Journal_Title
Magnetics in Japan, IEEE Translation Journal on
Publisher
ieee
ISSN
0882-4959
Type
jour
DOI
10.1109/TJMJ.1987.4549432
Filename
4549432
Link To Document