DocumentCode
769129
Title
Influence of Sputtering Conditions on Perpendicular Magnetic Anisotropy in GdTbCo Amorphous Films
Author
Tsutsumi, K. ; Fujii, Y. ; Hashima, K. ; Kurokawa, H. ; Sugahara, H.
Author_Institution
Materials and Electronic Devices Lab., Mitsubishi Electric Corp.
Volume
2
Issue
4
fYear
1987
fDate
4/1/1987 12:00:00 AM
Firstpage
344
Lastpage
345
Abstract
The effects of Ar pressure on GdTbCo film characteristics without bias voltage were studied. Sample films demonstrated a large perpendicular anisotropy (Ku ) which increased with the Tb contraction. In GdCo films, Ku became less negative as the Ar pressure increased, but Ku decreased in films containing Tb. Other results indicated that GdTbCo disks will be easy to manufacture.
Keywords
Amorphous materials; Anisotropic magnetoresistance; Argon; Helium; Magnetic films; Manufacturing; Perpendicular magnetic anisotropy; Sputtering; Substrates; Voltage;
fLanguage
English
Journal_Title
Magnetics in Japan, IEEE Translation Journal on
Publisher
ieee
ISSN
0882-4959
Type
jour
DOI
10.1109/TJMJ.1987.4549435
Filename
4549435
Link To Document