• DocumentCode
    769145
  • Title

    InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth

  • Author

    Liu, N. ; Jin, P. ; Wang, Z.-G.

  • Author_Institution
    Key Lab. of Semicond. Mater. Sci., Chinese Acad. of Sci., Beijing, China
  • Volume
    41
  • Issue
    25
  • fYear
    2005
  • Firstpage
    1400
  • Lastpage
    1402
  • Abstract
    Broadband superluminescent diodes are fabricated by using InAs/GaAs self-assembled quantum dots as an active region. The devices exhibited properties of 110 nm bandwidth with the centre of 1.1 μm and above 30 mW output under pulse injection at room temperature.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor quantum dots; superluminescent diodes; 1.1 micron; 30 mW; InAs-GaAs; broadband superluminescent diodes; molecular beam epitaxy; quantum dot superluminescent diodes; self-assembled quantum dots;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20053822
  • Filename
    1561781
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=769145