Title :
InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth
Author :
Liu, N. ; Jin, P. ; Wang, Z.-G.
Author_Institution :
Key Lab. of Semicond. Mater. Sci., Chinese Acad. of Sci., Beijing, China
Abstract :
Broadband superluminescent diodes are fabricated by using InAs/GaAs self-assembled quantum dots as an active region. The devices exhibited properties of 110 nm bandwidth with the centre of 1.1 μm and above 30 mW output under pulse injection at room temperature.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor quantum dots; superluminescent diodes; 1.1 micron; 30 mW; InAs-GaAs; broadband superluminescent diodes; molecular beam epitaxy; quantum dot superluminescent diodes; self-assembled quantum dots;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20053822
