Title :
The effects of ionizing radiation on the breakdown voltage of p-channel power MOSFETs
Author :
Kosier, S.L. ; Schrimpf, R.D. ; Cellier, F.E. ; Galloway, K.F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
fDate :
12/1/1990 12:00:00 AM
Abstract :
The effects of ionizing radiation on the breakdown voltage of p-channel power MOSFETs were examined through two-dimension simulation. The breakdown-voltage performance of p-channel power MOSFETs was found to be very different from that of corresponding n-channel power MOSFETs. In p-channel devices, simulation showed breakdown-voltage enhancement for low values of positive oxide-trapped charge, Not, whereas for high values of Not , the breakdown voltage may or may not continue to increase, and may actually decrease in some topologies. For comparison, in n-channel devices, increases in Not always cause breakdown-voltage degradation. The uncertainties stem from the interaction of the depletion region of the device (which is a function of its termination method) with its isolation technology, making it difficult to predict breakdown voltage for large Not. However, insights gained through analysis of depletion-region spreading in p-channel devices suggest a termination/isolation scheme, the VLD-FRR, that will enhance p-channel device reliability in radiation environments
Keywords :
insulated gate field effect transistors; power transistors; radiation hardening (electronics); reliability; semiconductor device models; semiconductor technology; VLD-FRR; breakdown voltage; breakdown-voltage degradation; breakdown-voltage enhancement; depletion-region spreading; effects of ionizing radiation; isolation technology; n-channel power MOSFETs; p-channel power MOSFETs; positive oxide-trapped charge; termination structures; termination/isolation scheme; two-dimension simulation; variation of lateral doping field reduction region; Computational modeling; Degradation; Ionizing radiation; Isolation technology; MOSFETs; P-n junctions; Radiation hardening; Termination of employment; Topology; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
