Title :
5.5-mm long InGaAsP monolithic extended-cavity laser with an integrated Bragg-reflector for active mode-locking
Author :
Hansen, P.B. ; Raybon, G. ; Koren, U. ; Miller, B.I. ; Young, M.G. ; Chien, M. ; Burrus, C.A. ; Alferness, R.C.
Author_Institution :
AT&T Bell Labs., Crawford Hill Lab., Holmdel, NJ, USA
fDate :
3/1/1992 12:00:00 AM
Abstract :
A 5.5-mm-long monolithic extended-cavity laser with an integrated Bragg-reflector in the InGaAsP system for active mode-locking at low repetition rates at a wavelength of 1.55 mu m has been fabricated. The device, which is designed to be used as a pulse source in long-distance soliton systems and optical time-division multiplexed systems, generates 20-ps-wide transform-limited pulses with a time-bandwidth product of 0.34 at a repetition rate of 8.1 GHz.<>
Keywords :
III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser mode locking; optical communication equipment; semiconductor junction lasers; 1.55 micron; 20 ps; 5.5 mm; InGaAsP; TDM; active mode-locking; integrated Bragg-reflector; long-distance soliton systems; low repetition rates; monolithic extended-cavity laser; multiplexing equipment; optical time-division multiplexed systems; pulse source; semiconductors; time-bandwidth product; transform-limited pulses; Frequency; Gratings; Laser mode locking; Optical design; Optical pulse generation; Optical pulse shaping; Resonance; Solitons; Threshold current; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
