Title :
A low-noise-figure 1.5 mu m multiple-quantum-well optical amplifier
Author :
Tauber, D. ; Nagar, R. ; Livne, A. ; Eisenstein, G. ; Koren, U. ; Raybon, G.
Author_Institution :
Dept. of Electr. Eng., Technion, Israel Inst. of Technol., Haifa, Israel
fDate :
3/1/1992 12:00:00 AM
Abstract :
The authors report on the noise characteristics of InGaAs/InGaAsP multiple-quantum-well optical amplifiers operating near 1.5 mu m. A noise figure of 4.4 dB is reported, verifying the predicted low-noise properties of quantum-well amplifiers.<>
Keywords :
III-V semiconductors; electron device noise; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; 1.5 micron; IR sources; InGaAs-InGaAsP; MQW diode lasers; low-noise properties; low-noise-figure; multiple-quantum-well optical amplifier; noise characteristics; semiconductors; Low-noise amplifiers; Noise figure; Nonlinear optics; Optical amplifiers; Optical noise; Optical saturation; Quantum well devices; Semiconductor device noise; Semiconductor optical amplifiers; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE
