GaInAs-GaInNAs-GaInAs intermediate layer structure for long wavelength lasers

Author

Gouardes, E. ; Miyamoto, T. ; Kawaguchi, M. ; Kondo, K. ; Koyama, F. ; Iga, K.

Author_Institution

Alcatel Corporate Res. Center, OPTO+, Marcoussis, France

Volume

14

Issue

7

fYear

2002

fDate

7/1/2002 12:00:00 AM

Firstpage

896

Lastpage

898

Abstract

Proposes two new structures, the GaInAs-GaInNAs intermediate layer (IML) and the GaInN/sub x/As graded wells, which show better optical properties than the commonly used GaInNAs-GaAs rectangular quantum-wells. A 1240-nm emitting IML laser has been achieved with a low-threshold current density (200 A/cm/sup 2//well) and a relatively high characteristic temperature (T/sub o/=100 K). The IML structure is very promising for long wavelength GaAs-based laser applications.

Keywords

III-V semiconductors; MOCVD; current density; gallium arsenide; gallium compounds; indium compounds; laser beams; photoluminescence; quantum well lasers; 100 K; 1240 nm; GaInAs-GaInNAs; GaInAs-GaInNAs intermediate layer; GaInAs-GaInNAs-GaInAs; GaInN/sub x/As; GaInN/sub x/As graded wells; characteristic temperature; intermediate layer laser; intermediate layer structure; long wavelength GaAs-based laser applications; long wavelength lasers; low-threshold current density; optical properties; rectangular quantum-wells; Chemical lasers; Degradation; Gallium arsenide; MOCVD; Molecular beam epitaxial growth; Nitrogen; Photoluminescence; Quantum well lasers; Temperature; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2002.1012377

Filename

1012377