Title :
All-optical photonic switches using integrated inverted asymmetric Fabry-Perot modulators and heterojunction phototransistors
Author :
Hu, Kezhong ; Chen, Li ; Kaviani, Kian ; Chen, Ping ; Madhukar, Anupam
Author_Institution :
Photonic Mater. & Dev. Lab., Univ. of Southern California, Los Angeles, CA, USA
fDate :
3/1/1992 12:00:00 AM
Abstract :
InGaAs/GaAs(100) multiple-quantum-well-based inverted cavity asymmetric Fabry-Perot modulators are vertically integrated with GaAs/AlGaAs heterojunction phototransistors to yield all-optical photonic switches. The photonic switches using "normally on" modulator pixels exhibit an output on-off ratio of 12:1 with an internal optical gain of 4 dB. The photonic switches using "normally off" modulator pixels yield similar contrast and gain, but exhibit intrinsic bistable behavior. The inverted cavity modulators employed permit utilizing the transparency of the GaAs substrate at the operating wavelength and offer advantages for fabricating large arrays for optical signal processing.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optics; integrated optoelectronics; optical bistability; optical modulation; optical switches; phototransistors; 4 dB; GaAs substrate; GaAs-AlGaAs; GaAs/AlGaAs heterojunction phototransistors; HPT; III-V semiconductor; InGaAs-GaAs; MQW; all-optical photonic switches; contrast; heterojunction phototransistors; integrated inverted asymmetric Fabry-Perot modulators; internal optical gain; intrinsic bistable behavior; large arrays; optical signal processing; output on-off ratio; transparency; Fabry-Perot; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Optical arrays; Optical modulation; Optical signal processing; Optical switches; Phototransistors; Quantum well devices;
Journal_Title :
Photonics Technology Letters, IEEE
